Open AccessPerformances of AlGaN/GaN HEMTs in planar technology
Author(s) -
M. Werquin,
N. Vellas,
Y. Guhel,
D. Ducatteau,
B. Boudart,
J.C. Pesant,
Z. Bougrioua,
M. Germain,
Jean-Claude de Jaeger,
Christophe Gaquière
Publication year - 2004
Publication title -
ams acta (university of bologna)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - high electron mobility transistor , materials science , planar , optoelectronics , sapphire , breakdown voltage , reliability (semiconductor) , gallium nitride , substrate (aquarium) , wide bandgap semiconductor , epitaxy , voltage , power (physics) , electrical engineering , transistor , computer science , layer (electronics) , nanotechnology , engineering , optics , physics , laser , oceanography , quantum mechanics , geology , computer graphics (images)
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