A GaAsSb/InP HBT circuit technology | Zendy

J. Godin | Zendy; M. Riet | Zendy; A. Konczykowska | Zendy; P. Berdaguer | Zendy; Myrtil L. Kahn | Zendy; P. Bove | Zendy; H. Lahreche | Zendy; R. Langer | Zendy; Melania Lijadi | Zendy; F. Pardo | Zendy; Nathalie Bardou | Zendy; Jean-Luc Pélouard | Zendy; Cristell Maneux | Zendy; Mohamed Belhaj | Zendy; B. Grandchamp | Zendy; Nathalie Labat | Zendy; A. Touboul | Zendy; C. BruChevallier | Zendy; Houssam Chouaib | Zendy; T. Benyattou | Zendy

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A GaAsSb/InP HBT circuit technology

Author(s) -

J. Godin,

M. Riet,

A. Konczykowska,

P. Berdaguer,

Myrtil L. Kahn,

P. Bove,

H. Lahreche,

R. Langer,

Melania Lijadi,

F. Pardo,

Nathalie Bardou,

Jean-Luc Pélouard,

Cristell Maneux,

Mohamed Belhaj,

B. Grandchamp,

Nathalie Labat,

A. Touboul,

C. BruChevallier,

Houssam Chouaib,

T. Benyattou

Publication year - 2005

Publication title -

hal (le centre pour la communication scientifique directe)

Language(s) - Uncategorized

Resource type - Conference proceedings

Subject(s) - heterojunction bipolar transistor , optoelectronics , materials science , gigabit , gallium arsenide , fabrication , indium phosphide , epitaxy , bipolar junction transistor , heterojunction , heterostructure emitter bipolar transistor , transistor , electrical engineering , electronic engineering , voltage , nanotechnology , engineering , medicine , alternative medicine , pathology , layer (electronics)

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