Open AccessCharacterization and modeling of 1200V – 100A N – channel 4H-SiC MOSFET
Author(s) -
Dinh-Lam Dang,
Sophie Guichard,
Matthieu Urbain,
Stéphane Raël
Publication year - 2016
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - datasheet , mosfet , materials science , silicon carbide , optoelectronics , power mosfet , threshold voltage , channel (broadcasting) , transistor , jfet , characterization (materials science) , electronic engineering , electrical engineering , voltage , field effect transistor , nanotechnology , engineering , composite material
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