Open AccessInfluence of passivation on high-power AlGaN/GaN HEMT devices at 10 GHz
Author(s) -
D. Ducatteau,
M. Werquin,
Christophe Gaquière,
D. Théron,
Trevor Martin,
E. Delos,
B. Grimbert,
E. Morvan,
N. Caillas,
Virginie Hoel,
Jean-Claude de Jaeger,
S. Delage
Publication year - 2004
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - passivation , materials science , high electron mobility transistor , optoelectronics , transistor , wide bandgap semiconductor , signal (programming language) , electrical engineering , layer (electronics) , voltage , nanotechnology , computer science , engineering , programming language
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