Open AccessCarrier's transport mechanisms investigations in AlGaN/GaN HEMT thanks to physical modelling and low frequency noise measurements
Author(s) -
Geoffroy Soubercaze-Pun,
Jean-Guy Tartarin,
L. Bary,
S.L. Delage,
R. Plana,
J. Graffeuil
Publication year - 2004
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - high electron mobility transistor , optoelectronics , wide bandgap semiconductor , noise (video) , materials science , gallium nitride , electronic engineering , acoustics , electrical engineering , computer science , physics , transistor , engineering , nanotechnology , voltage , layer (electronics) , artificial intelligence , image (mathematics)
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