Open AccessThermal Stability Enhancement of GaN-based Devices: Towards Highly Reliable MOSHEMT
Author(s) -
F Medjdoub,
Joff Derluyn,
Kai Cheng,
Maarten Leys,
Stefan Degroote,
M. Germain,
G. Borghs
Publication year - 2008
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - Uncategorized
Resource type - Conference proceedings
Subject(s) - materials science , optoelectronics , heterojunction , high electron mobility transistor , passivation , gallium nitride , reliability (semiconductor) , schottky barrier , degradation (telecommunications) , wide bandgap semiconductor , electronic engineering , transistor , layer (electronics) , nanotechnology , power (physics) , electrical engineering , diode , voltage , physics , quantum mechanics , engineering
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