Open AccessInvestigation on the use of the MOSFET SiC body diode for junction temperature measurement
Author(s) -
Quang Chuc Nguyen,
P. Tounsi,
Jean-Pierre Fradin,
Jean-Michel Reynès
Publication year - 2020
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - mosfet , junction temperature , diode , materials science , optoelectronics , temperature measurement , silicon carbide , electrical engineering , wide bandgap semiconductor , transistor , engineering , physics , voltage , thermal , composite material , quantum mechanics , meteorology