Open AccessExperimental and simulation results of OBIC Technique Applied to Wide Bandgap Semiconductors
Author(s) -
Dominique Planson,
Luong Viêt Phung,
Besar Asllani,
Pascal Bevilacqua,
Hassan Hamad,
Christophe Raynaud
Publication year - 2018
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - materials science , optoelectronics , gallium nitride , silicon carbide , wide bandgap semiconductor , schottky diode , semiconductor , schottky barrier , diamond , diode , electric field , semiconductor device , power semiconductor device , band gap , voltage , electrical engineering , nanotechnology , layer (electronics) , physics , engineering , quantum mechanics , metallurgy , composite material
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom