Open AccessAlGaN channel high electron mobility transistors on bulk AlN substrate
Author(s) -
Jash Mehta,
Idriss Abid,
Reda Elwaradi,
Y. Cordier,
Farid Medjdoub
Publication year - 2022
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - optoelectronics , materials science , transistor , substrate (aquarium) , induced high electron mobility transistor , electron mobility , channel (broadcasting) , wide bandgap semiconductor , electron , electrical engineering , high electron mobility transistor , computer science , computer network , physics , engineering , geology , oceanography , quantum mechanics , voltage
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