Open AccessHigh Temperature Silicon Carbide Chemical Vapor deposition processes: from pure thermodynamic to Mass transport modeling
Author(s) -
E. Blanquet,
Didier Chaussende,
Shinichi Nishizawa,
M. Pons
Publication year - 2006
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - microelectronics , silicon carbide , chemical vapor deposition , mass transport , transport phenomena , materials science , silicon , deposition (geology) , carbide , chemical process , nanotechnology , engineering physics , computer science , process engineering , chemical engineering , thermodynamics , engineering , physics , metallurgy , paleontology , sediment , biology
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