Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates : application to X-band low noise amplifiers | Zendy

Jean-Claude de Jaeger | Zendy; S.L. Delage | Zendy; G. Dambrine | Zendy; M.A. Poisson | Zendy; Virginie Hoel | Zendy; Sylvie Lépilliet | Zendy; B. Grimbert | Zendy; E. Morvan | Zendy; Y. Mancuso | Zendy; G. Gauthier | Zendy; Aurélie Lefrançois | Zendy; Y. Cordier | Zendy

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Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates : application to X-band low noise amplifiers

Author(s) -

Jean-Claude de Jaeger,

S.L. Delage,

G. Dambrine,

M.A. Poisson,

Virginie Hoel,

Sylvie Lépilliet,

B. Grimbert,

E. Morvan,

Y. Mancuso,

G. Gauthier,

Aurélie Lefrançois,

Y. Cordier

Publication year - 2005

Publication title -

hal (le centre pour la communication scientifique directe)

Language(s) - English

Resource type - Conference proceedings

Subject(s) - noise figure , materials science , robustness (evolution) , optoelectronics , low noise amplifier , wide bandgap semiconductor , amplifier , high electron mobility transistor , noise (video) , noise measurement , gallium nitride , transistor , electrical engineering , computer science , acoustics , physics , noise reduction , engineering , nanotechnology , cmos , voltage , artificial intelligence , image (mathematics) , layer (electronics) , chemistry , biochemistry , gene

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