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Submicrometer InAlAs/InGaAs double-gate HEMT's on transferred substrate
Author(s) -
Nicolas Wichmann,
I. Duszynski,
T. Parenty,
S. Bollaert,
J. Mateos,
X. Wallart,
A. Cappy
Publication year - 2004
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - Uncategorized
Resource type - Conference proceedings
Subject(s) - transconductance , optoelectronics , materials science , high electron mobility transistor , substrate (aquarium) , fabrication , conductance , gallium arsenide , transistor , electrical engineering , voltage , condensed matter physics , engineering , physics , medicine , oceanography , alternative medicine , pathology , geology

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