Open AccessAnalytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement
Author(s) -
Jean-Claude Jacquet,
Raphaël Aubry,
H. Gérard,
E. Delos,
Nathalie Rolland,
Y. Cordier,
A. Bussutil,
Michel Rousseau,
S.L. Delage
Publication year - 2004
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - high electron mobility transistor , ohmic contact , materials science , optoelectronics , wide bandgap semiconductor , electron mobility , gallium nitride , silicon carbide , sapphire , semiconductor , transistor , schottky barrier , schottky diode , semiconductor device , nanotechnology , electrical engineering , diode , composite material , physics , optics , layer (electronics) , voltage , engineering , laser
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