Open Access3D Modelling of Temperature Dependent Power Distribution During Microwave Annealing of Doped c-Si
Author(s) -
S D Das
Publication year - 2014
Publication title -
iosr journal of electrical and electronics engineering
Language(s) - English
Resource type - Journals
eISSN - 2320-3331
pISSN - 2278-1676
DOI - 10.9790/1676-09154651
Subject(s) - doping , microwave , materials science , annealing (glass) , optoelectronics , computer science , telecommunications , composite material