Open AccessBond Pad Probe Marks Effect on Intermetallic Coverage
Author(s) -
Anthony Moreno,
Rennier S. Rodriguez,
Frederick Ray I. Gomez
Publication year - 2021
Publication title -
journal of engineering research and reports
Language(s) - English
Resource type - Journals
ISSN - 2582-2926
DOI - 10.9734/jerr/2021/v20i117253
Subject(s) - intermetallic , wire bonding , bond strength , materials science , aluminium , bond , composite material , metallurgy , engineering , electrical engineering , alloy , layer (electronics) , adhesive , chip , finance , economics
The paper presents a study on the effect of semiconductor die’s bond pad probe marks on the interface between the wire and the bond pad. The probe marks are quantified in terms of percentage area in the bond pad, while the interface strength between the wire of Gold material to the Aluminum bond pad is measured through the intermetallic coverage (IMC). Actual evaluation showed that the size of the probe marks has significant impact on the bond pad area, especially on IMC. Validations were made comparing the IMC and shear strength performance of the wire ball bonded on the worst-case probe marks and on the standard probe marks. The learnings on this study could be used on future works with similar requirement.