Gettering mechanism in hydrocarbon-molecular-ion-implanted epitaxial silicon wafers revealed by three-dimensional atom imaging | Zendy

Ayumi OnakaMasada | Zendy; Ryosuke Okuyama | Zendy; Toshiro Nakai | Zendy; Satoshi Shigematsu | Zendy; Hidehiko Okuda | Zendy; K. Kobayashi | Zendy; Ryo Hirose | Zendy; Takeshi Kadono | Zendy; Yoshihiro Koga | Zendy; Masanori Shinohara | Zendy; Koji Sueoka | Zendy; Kazunari Kurita | Zendy

Open Access

Gettering mechanism in hydrocarbon-molecular-ion-implanted epitaxial silicon wafers revealed by three-dimensional atom imaging

Author(s) -

Ayumi OnakaMasada,

Ryosuke Okuyama,

Toshiro Nakai,

Satoshi Shigematsu,

Hidehiko Okuda,

K. Kobayashi,

Ryo Hirose,

Takeshi Kadono,

Yoshihiro Koga,

Masanori Shinohara,

Koji Sueoka,

Kazunari Kurita

Publication year - 2018

Publication title -

japanese journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.487

H-Index - 129

eISSN - 1347-4065

pISSN - 0021-4922

DOI - 10.7567/jjap.57.091302

Subject(s) - getter , silicon , agglomerate , transmission electron microscopy , materials science , wafer , epitaxy , carbon fibers , x ray photoelectron spectroscopy , ion implantation , analytical chemistry (journal) , atom probe , layer (electronics) , ion , crystallography , chemistry , chemical engineering , optoelectronics , nanotechnology , organic chemistry , composite material , composite number , engineering

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