Open AccessGettering mechanism in hydrocarbon-molecular-ion-implanted epitaxial silicon wafers revealed by three-dimensional atom imaging
Author(s) -
Ayumi OnakaMasada,
Ryosuke Okuyama,
Toshiro Nakai,
Satoshi Shigematsu,
Hiroyuki Okuda,
Kôji Kobayashi,
Ryo Hirose,
Takeshi Kadono,
Yoshio Koga,
Masanori Shinohara,
Koji Sueoka,
Kazunari Kurita
Publication year - 2018
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.7567/jjap.57.091302
Subject(s) - getter , silicon , agglomerate , transmission electron microscopy , materials science , wafer , epitaxy , carbon fibers , x ray photoelectron spectroscopy , ion implantation , analytical chemistry (journal) , atom probe , layer (electronics) , ion , crystallography , chemistry , chemical engineering , optoelectronics , nanotechnology , organic chemistry , composite material , composite number , engineering