Open AccessEffect of low-oxygen-concentration layer on iron gettering capability of carbon-cluster ion-implanted Si wafer for CMOS image sensors
Author(s) -
Ayumi OnakaMasada,
Toshiro Nakai,
Ryosuke Okuyama,
Hidehiko Okuda,
Takeshi Kadono,
Ryo Hirose,
Yoshihiro Koga,
Kazunari Kurita,
Koji Sueoka
Publication year - 2018
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.7567/jjap.57.021304
Subject(s) - getter , wafer , silicon , epitaxy , materials science , carbon fibers , substrate (aquarium) , ion implantation , layer (electronics) , analytical chemistry (journal) , optoelectronics , ion , chemistry , nanotechnology , composite material , organic chemistry , composite number , oceanography , chromatography , geology
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