Effect of dose and size on defect engineering in carbon cluster implanted silicon wafers | Zendy

Ryosuke Okuyama | Zendy; Ayumi Masada | Zendy; Satoshi Shigematsu | Zendy; Takeshi Kadono | Zendy; Ryo Hirose | Zendy; Yoshihiro Koga | Zendy; Hidehiko Okuda | Zendy; Kazunari Kurita | Zendy

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Effect of dose and size on defect engineering in carbon cluster implanted silicon wafers

Author(s) -

Ryosuke Okuyama,

Ayumi Masada,

Satoshi Shigematsu,

Takeshi Kadono,

Ryo Hirose,

Yoshihiro Koga,

Hidehiko Okuda,

Kazunari Kurita

Publication year - 2017

Publication title -

japanese journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.487

H-Index - 129

eISSN - 1347-4065

pISSN - 0021-4922

DOI - 10.7567/jjap.57.011301

Subject(s) - materials science , silicon , wafer , ion implantation , high resolution transmission electron microscopy , transmission electron microscopy , carbon fibers , silicon carbide , optoelectronics , epitaxy , electron diffraction , recrystallization (geology) , getter , nanotechnology , layer (electronics) , diffraction , ion , chemistry , composite material , optics , composite number , paleontology , physics , organic chemistry , biology

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