Open AccessEffect of dose and size on defect engineering in carbon cluster implanted silicon wafers
Author(s) -
Ryosuke Okuyama,
Ayumi Masada,
Satoshi Shigematsu,
Takeshi Kadono,
Ryo Hirose,
Yoshio Koga,
Hiroyuki Okuda,
Kazunari Kurita
Publication year - 2017
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.7567/jjap.57.011301
Subject(s) - materials science , silicon , wafer , ion implantation , high resolution transmission electron microscopy , transmission electron microscopy , carbon fibers , silicon carbide , optoelectronics , epitaxy , electron diffraction , recrystallization (geology) , getter , nanotechnology , layer (electronics) , diffraction , ion , chemistry , composite material , optics , composite number , paleontology , physics , organic chemistry , biology