Open AccessFabrication of 4H-SiC lateral double implanted MOSFET on an on-axis semi-insulating substrate without using epi-layer
Author(s) -
Hyoung-Woo Kim,
Ogyun Seok,
Jeong Hyun Moon,
Wook Bahng,
Jungyol Jo
Publication year - 2017
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.7567/jjap.56.120305
Subject(s) - materials science , fabrication , substrate (aquarium) , mosfet , optoelectronics , layer (electronics) , field effect transistor , transistor , ion implantation , voltage , electrical engineering , composite material , ion , chemistry , pathology , geology , medicine , oceanography , alternative medicine , engineering , organic chemistry