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Single-Electron Charging in Phosphorus Donors in Silicon Observed by Low-Temperature Kelvin Probe Force Microscope
Author(s) -
Miftahul Anwar,
Yuya Kawai,
Daniel Moraru,
Roland Nowak,
Ryszard Jabłoński,
Takeshi Mizuno,
Michiharu Tabe
Publication year - 2011
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.7567/jjap.50.08lb10
Subject(s) - kelvin probe force microscope , chemistry , silicon , electron , voltage , doping , threshold voltage , field emission microscopy , transistor , analytical chemistry (journal) , materials science , atomic physics , optoelectronics , atomic force microscopy , nanotechnology , electrical engineering , optics , physics , diffraction , engineering , quantum mechanics , chromatography

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