Open AccessSemipolar InGaN/GaN nanostructure light-emitting diodes on c-plane sapphire
Author(s) -
Ashwin K. Rishinaramangalam,
Mohsen Nami,
Michael N. Fairchild,
Darryl M. Shima,
Ganesh Balakrishnan,
S. R. J. Brueck,
Daniel Feezell
Publication year - 2016
Publication title -
applied physics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.7567/apex.9.032101
Subject(s) - materials science , sapphire , light emitting diode , optoelectronics , chemical vapor deposition , metalorganic vapour phase epitaxy , lithography , electroluminescence , nanolithography , nitride , spectroscopy , nanostructure , fabrication , optics , nanotechnology , laser , epitaxy , layer (electronics) , physics , quantum mechanics , medicine , alternative medicine , pathology
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