Lattice-plane orientation mapping of homo-epitaxial GaN(0001) thin films via grazing-incidence X-ray diffraction topography in 2-in. wafer
Author(s) -
Jaemyung Kim,
Okkyun Seo,
Chulho Song,
Satoshi Hiroi,
Yanna Chen,
Yoshihiro Irokawa,
Toshihide Nabatame,
Yasuo Koide,
Osami Sakata
Publication year - 2018
Publication title -
applied physics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.7567/apex.11.081002
Subject(s) - diffraction , wafer , materials science , epitaxy , optics , lattice (music) , azimuth , x ray crystallography , orientation (vector space) , lattice plane , x ray , optoelectronics , physics , geometry , reciprocal lattice , mathematics , nanotechnology , layer (electronics) , acoustics
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