Open AccessUltrahigh-yield growth of GaN via halogen-free vapor-phase epitaxy
Author(s) -
Daisuke Nakamura,
Taishi Kimura
Publication year - 2018
Publication title -
applied physics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.7567/apex.11.065502
Subject(s) - yield (engineering) , epitaxy , vapor phase , materials science , hydride , sapphire , substrate (aquarium) , halogen , phase (matter) , optoelectronics , chemical engineering , analytical chemistry (journal) , chemistry , nanotechnology , composite material , metallurgy , thermodynamics , optics , layer (electronics) , organic chemistry , laser , metal , oceanography , geology , physics , alkyl , engineering
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