Open AccessUltrahigh-yield growth of GaN via halogen-free vapor-phase epitaxy
Author(s) -
Daisuke Nakamura,
Taishi Kimura
Publication year - 2018
Publication title -
applied physics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.7567/apex.11.065502
Subject(s) - yield (engineering) , epitaxy , hydride , vapor phase , materials science , sapphire , halogen , substrate (aquarium) , phase (matter) , optoelectronics , chemical engineering , analytical chemistry (journal) , chemistry , nanotechnology , metallurgy , optics , thermodynamics , laser , organic chemistry , biology , metal , alkyl , physics , layer (electronics) , ecology , engineering