Open AccessSignificant increase in GaN growth rate by halogen-free vapor phase epitaxy with porosity-controlled evaporator
Author(s) -
Daisuke Nakamura,
Taishi Kimura
Publication year - 2017
Publication title -
applied physics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.7567/apex.10.095503
Subject(s) - evaporator , epitaxy , materials science , porosity , growth rate , vapor phase , capillary action , ceramic , phase (matter) , composite material , chemical engineering , chemistry , thermodynamics , physics , geometry , heat exchanger , mathematics , organic chemistry , layer (electronics) , engineering
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