Three-dimensional integration technology of magnetic tunnel junctions for magnetoresistive random access memory application | Zendy

Kay Yakushiji | Zendy; Hideki Takagi | Zendy; Naoya Watanabe | Zendy; Akio Fukushima | Zendy; Katsuya Kikuchi | Zendy; Yuichi Kurashima | Zendy; Atsushi Sugihara | Zendy; Hitoshi Kubota | Zendy; Shinji Yuasa | Zendy

Open Access

Three-dimensional integration technology of magnetic tunnel junctions for magnetoresistive random access memory application

Author(s) -

Kay Yakushiji,

Hideki Takagi,

Naoya Watanabe,

Akio Fukushima,

Katsuya Kikuchi,

Yuichi Kurashima,

Atsushi Sugihara,

Hitoshi Kubota,

Shinji Yuasa

Publication year - 2017

Publication title -

applied physics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.911

H-Index - 94

eISSN - 1882-0786

pISSN - 1882-0778

DOI - 10.7567/apex.10.063002

Subject(s) - magnetoresistive random access memory , tunnel magnetoresistance , materials science , nanopillar , magnetoresistance , wafer , ferromagnetism , silicon , epitaxy , spin transfer torque , perpendicular , wafer bonding , optoelectronics , magnetization , condensed matter physics , nanotechnology , magnetic field , nanostructure , random access memory , computer science , layer (electronics) , physics , geometry , mathematics , quantum mechanics , computer hardware

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research