Open AccessHalogen-free vapor phase epitaxy for high-rate growth of GaN bulk crystals
Author(s) -
Daisuke Nakamura,
Taishi Kimura,
Kayo Horibuchi
Publication year - 2017
Publication title -
applied physics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.7567/apex.10.045504
Subject(s) - vapor phase , epitaxy , materials science , dislocation , impurity , growth rate , crystal (programming language) , phase (matter) , crystal growth , optoelectronics , halogen , analytical chemistry (journal) , crystallography , chemistry , nanotechnology , composite material , thermodynamics , chromatography , layer (electronics) , physics , geometry , mathematics , organic chemistry , computer science , programming language , alkyl
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