Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors | Zendy

Wataru Mizubayashi | Zendy; Shuichi Noda | Zendy; Yuki Ishikawa | Zendy; Takashi Nishi | Zendy; Akio Kikuchi | Zendy; Hiroyuki Ota | Zendy; Ping-Hsun Su | Zendy; Yiming Li | Zendy; Seiji Samukawa | Zendy; Kazuhiko Endo | Zendy

Open Access

Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors

Author(s) -

Wataru Mizubayashi,

Shuichi Noda,

Yuki Ishikawa,

Takashi Nishi,

Akio Kikuchi,

Hiroyuki Ota,

Ping-Hsun Su,

Yiming Li,

Seiji Samukawa,

Kazuhiko Endo

Publication year - 2017

Publication title -

applied physics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.911

H-Index - 94

eISSN - 1882-0786

pISSN - 1882-0778

DOI - 10.7567/apex.10.026501

Subject(s) - etching (microfabrication) , materials science , fin , irradiation , optoelectronics , fabrication , dry etching , plasma , inductively coupled plasma , plasma etching , reactive ion etching , surface roughness , nanotechnology , composite material , layer (electronics) , physics , medicine , alternative medicine , pathology , quantum mechanics , nuclear physics

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