Open AccessImpacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors
Author(s) -
Wataru Mizubayashi,
Shuichi Noda,
Yoshihiro Ishikawa,
Takanori Nishi,
Akio Kikuchi,
Hiroyuki Ota,
Ping Su,
Yiming Li,
Seiji Samukawa,
Kazuhiko Endo
Publication year - 2017
Publication title -
applied physics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.7567/apex.10.026501
Subject(s) - etching (microfabrication) , materials science , fin , irradiation , optoelectronics , fabrication , dry etching , plasma , inductively coupled plasma , plasma etching , reactive ion etching , surface roughness , nanotechnology , composite material , layer (electronics) , physics , medicine , alternative medicine , pathology , quantum mechanics , nuclear physics