Open AccessHigh-exposure-durability, high-quantum-efficiency (>90%) backside-illuminated soft-X-ray CMOS sensor
Author(s) -
Tetsuo Harada,
Nobukazu Teranishi,
Takeo Watanabe,
Quan Zhou,
Jan Bogaerts,
Xinyang Wang
Publication year - 2019
Publication title -
applied physics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.7567/1882-0786/ab5b5e
Subject(s) - quantum efficiency , materials science , optoelectronics , fabrication , optics , photon , layer (electronics) , irradiation , durability , physics , nanotechnology , composite material , medicine , alternative medicine , pathology , nuclear physics
We develop a high-quantum-efficiency, high-exposure-durability backside-illuminated CMOS image sensor for soft-X-ray detection. The backside fabrication process is optimized to reduce the dead-layer thickness, and the Si-layer thickness is increased to 9.5 μ m to reduce radiation damage. Our sensor demonstrates a high quantum efficiency of >90% in the photon-energy range of 80–1000 eV. Further, its EUV-regime efficiency is ∼100% because the dead-layer thickness is only 5 nm. The readout noise is as low as 2.5 e − rms and the frame rate as high as 48 fps, which makes the device practical for general soft X-ray experiments.