High-exposure-durability, high-quantum-efficiency (>90%) backside-illuminated soft-X-ray CMOS sensor | Zendy

Tetsuo Harada | Zendy; Nobukazu Teranishi | Zendy; Takeo Watanabe | Zendy; Quan Zhou | Zendy; Jan Bogaerts | Zendy; Xinyang Wang | Zendy

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High-exposure-durability, high-quantum-efficiency (>90%) backside-illuminated soft-X-ray CMOS sensor

Author(s) -

Tetsuo Harada,

Nobukazu Teranishi,

Takeo Watanabe,

Quan Zhou,

Jan Bogaerts,

Xinyang Wang

Publication year - 2019

Publication title -

applied physics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.911

H-Index - 94

eISSN - 1882-0786

pISSN - 1882-0778

DOI - 10.7567/1882-0786/ab5b5e

Subject(s) - quantum efficiency , materials science , optoelectronics , fabrication , optics , photon , layer (electronics) , irradiation , durability , physics , nanotechnology , composite material , medicine , alternative medicine , pathology , nuclear physics

We develop a high-quantum-efficiency, high-exposure-durability backside-illuminated CMOS image sensor for soft-X-ray detection. The backside fabrication process is optimized to reduce the dead-layer thickness, and the Si-layer thickness is increased to 9.5 μ m to reduce radiation damage. Our sensor demonstrates a high quantum efficiency of >90% in the photon-energy range of 80–1000 eV. Further, its EUV-regime efficiency is ∼100% because the dead-layer thickness is only 5 nm. The readout noise is as low as 2.5 e − rms and the frame rate as high as 48 fps, which makes the device practical for general soft X-ray experiments.

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