English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We report the first demonstration of self-aligned gate (SAG)  β -Ga 2 O 3  metal-oxide-semiconductor field-effect transistors (MOSFETs) as a path toward eliminating source access resistance for low-loss power applications. The SAG process is implemented with a subtractively defined and etched refractory metal, such as Tungsten, combined with ion-implantation. We report experimental and modeled DC performance of a representative SAG device that achieved a maximum transconductance of 35 mS mm −1  and an on-resistance of ∼30 Ω mm with a 2.5  μ m gate length. These results highlight the advantage of implant technology for SAG  β -Ga 2 O 3  MOSFETs enabling future power switching and RF devices with low parasitic resistance.

Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates

Thin channel β-Ga₂O₃ MOSFETs with self-aligned refractory metal gates