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Electrical tuning of spin–orbit interaction (SOI) is important for spintronics. Here we report that InSb nanowire with a nearby back gate structure enables efficient tuning of the Rashba SOI with small gate voltage. Consequently, the Rashba coupling parameter is larger than those obtained for various previously reported III–V nanowire devices. Our findings demonstrate that InSb nanowire with this back gate structure will provide prominent and easy-to-use devices in the fields of spintronics and spin–orbitronics.

Efficient gate control of spin–orbit interaction in InSb nanowire FET with a nearby back gate