Open AccessSingle transverse mode operation of GaN-based vertical-cavity surface-emitting laser with monolithically incorporated curved mirror
Author(s) -
Hiroshi Nakajima,
Tatsushi Hamaguchi,
Masayuki Tanaka,
Masamichi Ito,
Tatsuro Jyokawa,
Tatsuya Matou,
Kentaro Hayashi,
Maho Ohara,
Noriko Kobayashi,
H. Watanabe,
Rintaro Koda,
Katsunori Yanashima
Publication year - 2019
Publication title -
applied physics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.7567/1882-0786/ab3106
Subject(s) - transverse plane , transverse mode , optics , materials science , curvature , laser , radius of curvature , aperture (computer memory) , vertical cavity surface emitting laser , radius , optoelectronics , mode (computer interface) , physics , acoustics , geometry , mathematics , structural engineering , computer science , engineering , operating system , mean curvature , computer security , mean curvature flow
We report single transverse mode operation of a blue GaN-based vertical-cavity surface-emitting laser (GaN-VCSEL) with a monolithically incorporated curved mirror. For a device with a 4 μ m current aperture diameter and a curved mirror with a radius of curvature (ROC) of 51 μ m, single transverse mode operation was confirmed up to an output power of 3.2 mW under continuous wave operation at 20 °C. For a device with a smaller ROC of 31 μ m, multi transverse mode operation was confirmed, indicating that the transverse mode can be controlled by the cavity design of such GaN-VCSELs.