Open AccessIndication of current-injection lasing from an organic semiconductor
Author(s) -
Atula S. D. Sandanayaka,
Toshinori Matsushima,
Fatima Bencheikh,
Shinobu Terakawa,
William J. Potscavage,
Chuanjiang Qin,
Takashi Fujihara,
Kenichi Goushi,
JeanCharles Ribierre,
Chihaya Adachi
Publication year - 2019
Publication title -
applied physics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.7567/1882-0786/ab1b90
Subject(s) - lasing threshold , optoelectronics , materials science , organic semiconductor , gain switching , electroluminescence , laser , diode , semiconductor laser theory , semiconductor , oled , carbazole , laser diode , wavelength , optics , chemistry , photochemistry , nanotechnology , physics , layer (electronics)
In this study, we investigate the lasing properties of 4,4′-bis[( N -carbazole)styryl]biphenyl thin films under electrical pumping. The electroluminescent devices incorporate a mixed-order distributed feedback SiO 2 grating into an organic light-emitting diode structure and emit blue lasing. The results provide an indication of lasing by direct injection of current into an organic thin film through selection of a high-gain organic semiconductor showing clear separation of the lasing wavelength from significant triplet and polaron absorption and design of a proper feedback structure with low losses at high current densities. This study represents an important advance toward a future organic laser diode technology.
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