English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We report In 0.52 Al 0.48 As/In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As single-quantum-well metal-insulator-semiconductor field-effect transistors (MISFETs) with a selective source/drain regrowth process. Long-channel InGaAs MISFETs yielded a subthreshold swing (S) of 61 mV/decade at V DS  = 0.05 V and room temperature, and displayed very little frequency dispersion behavior in capacitance–voltage (CV) characteristics in both the strong-inversion and weak-inversion regimes. Both the S and CV results reflect the excellent interface quality between a molecular beam epitaxy-grown InAlAs insulator and an InGaAs channel. The devices showed as little as 0.8% per decade of frequency dispersion at the maximum gate capacitance in the strong-inversion regime. Moreover, the fabricated devices yielded an effective mobility ( μ n_ eff ) of 11 900 cm 2  V −1  · s −1  at room temperature, and degradation of  μ n_ eff  with  V GS  in the strong-inversion regime was negligible. These results are a consequence of the small interfacial state density and the smooth surface morphology at the interface.

applied physics express

Long-channel InAlAs/InGaAs/InAlAs single-quantum-well MISFETs with subthreshold swing of 61 mV/decade and effective mobility of 11 900 cm2 V−1 · s−1