
Simple wet-etching technology for GaN using an electrodeless photo-assisted electrochemical reaction with a luminous array film as the UV source
Author(s) -
Fumimasa Horikiri,
Noboru Fukuhara,
Hiroshi Ohta,
Naomi Asai,
Yuji Narita,
Takehiro Yoshida,
Tomoyoshi Mishima,
Masachika Toguchi,
Kenji Miwa,
Taketomo Sato
Publication year - 2019
Publication title -
applied physics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.7567/1882-0786/ab043c
Subject(s) - tetramethylammonium hydroxide , oxidizing agent , materials science , electrochemistry , etching (microfabrication) , ultraviolet , electrolyte , hydroxide , irradiation , chemistry , optoelectronics , nanotechnology , electrode , inorganic chemistry , physics , organic chemistry , layer (electronics) , nuclear physics