Open AccessImproved operation stability of Al2O3/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates
Author(s) -
Yuji Ando,
Shota Kaneki,
Tamotsu Hashizume
Publication year - 2019
Publication title -
applied physics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.7567/1882-0786/aafded
Subject(s) - high electron mobility transistor , materials science , optoelectronics , transistor , threshold voltage , annealing (glass) , subthreshold conduction , electron mobility , voltage , electrical engineering , metallurgy , engineering
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