Open AccessOperando observation of resistive switching in a resistive random-access memory by laser-excited photoemission electron microscope
Author(s) -
Yuji Okuda,
Junpei Kawakita,
Toshiyuki Taniuchi,
Hisashi Shima,
Atsushi Shimizu,
Yasuhisa Naitoh,
Kentaro Kinoshita,
Hiroyuki Akinaga,
Shik Shin
Publication year - 2019
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.7567/1347-4065/ab645f
Subject(s) - resistive random access memory , resistive touchscreen , materials science , laser , photoemission electron microscopy , excited state , optoelectronics , microscope , electrode , electron microscope , nanotechnology , optics , chemistry , atomic physics , electrical engineering , physics , engineering
We developed a laser-excited photoemission electron microscope (Laser-PEEM) that enables us to perform a non-destructive operando observation for elucidating the changes in the physical properties of electronic devices. By utilizing the Laser-PEEM, the non-volatile resistance change in the resistive random-access memory (ReRAM) was clearly visualized, even though the resistance change occurred under the electrode of the ReRAM, thanks to the deep probing depth. The operando observation of the Laser-PEEM is very promising as an observation method for various kinds of devices because the observation simultaneously provides us with morphological and electrical properties in real time.
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