Open AccessTransition of conduction mechanism from band to variable-range hopping conduction due to Al doping in heavily Al-doped 4H-SiC epilayers
Author(s) -
Hideharu Matsuura,
Akinobu Takeshita,
Tatsuya Imamura,
Kota Takano,
K Okuda,
Atsuki Hidaka,
Shiyang Ji,
Kazuma Eto,
Kazutoshi Kojima,
Tomohisa Kato,
Sadafumi Yoshida,
Hajime Okumura
Publication year - 2019
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.7567/1347-4065/ab3c2c
Subject(s) - thermal conduction , variable range hopping , doping , condensed matter physics , materials science , conduction band , optoelectronics , physics , electron , composite material , quantum mechanics
We investigate the transition of the conduction mechanism from band and nearest-neighbor hopping (NNH) conduction to variable-range hopping (VRH) conduction in heavily Al-doped 4H-SiC epilayers with increasing Al concentration ( C Al ). In a sample with C Al of 1.8 × 10 20 cm −3 , the dominant conduction mechanisms at high and low temperatures were band and VRH conduction, respectively, whereas in samples with lower C Al values they were band and NNH conduction, respectively, and in samples with higher C Al values VRH conduction was dominant over the entire range of measurement temperatures examined (20–600 K).