Open AccessIntensive luminescence from a thick, indium-rich In0.7Ga0.3N film
Author(s) -
Bowen Sheng,
F. Bertram,
Xiantong Zheng,
Ping Wang,
Gordon Schmidt,
Peter Veit,
J. Bläsing,
Zhaoying Chen,
A. Strittmatter,
J. Christen,
Bo Shen,
Xinqiang Wang
Publication year - 2019
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.7567/1347-4065/ab1a5b
Subject(s) - cathodoluminescence , luminescence , materials science , indium , sapphire , full width at half maximum , molecular beam epitaxy , homogeneity (statistics) , analytical chemistry (journal) , epitaxy , crystal (programming language) , photoluminescence , layer (electronics) , optoelectronics , optics , laser , chemistry , nanotechnology , physics , statistics , mathematics , chromatography , computer science , programming language
An In 0.7 Ga 0.3 N layer with a thickness of 300 nm deposited on GaN/sapphire template by molecular beam epitaxy has been investigated by highly spatially resolved cathodoluminescence (CL). High crystal film quality without phase separation has been achieved. The InGaN layer shows intense emission in the IR spectral region. The lateral as well as the vertical luminescence distribution is used to probe the In composition ([In]) homogeneity: the thick InGaN film exhibits laterally a rather homogeneous emission intensity at 1.04 eV (∼1185 nm) with a FWHM of only 63 meV. Carrier localization into regions of enhanced In concentration originating from compositional fluctuations is revealed. The evolution of emission in growth direction has been explored by a cross-sectional CL linescan showing a slight spectral redshift from the bottom to the surface of the InGaN film corresponding to an increase of [In] of only 0.5% within the layer thickness of 300 nm.