Open AccessGrowth of GaN on a three-dimensional SCAATTM bulk seed by tri-halide vapor phase epitaxy using GaCl3
Author(s) -
Kenji Iso,
Daisuke Oozeki,
Syoma Ohtaki,
Hisashi Murakami,
Akinori Koukitu
Publication year - 2019
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.7567/1347-4065/ab1479
Subject(s) - materials science , epitaxy , bar (unit) , phase (matter) , analytical chemistry (journal) , chemistry , nanotechnology , physics , organic chemistry , layer (electronics) , chromatography , meteorology
GaN with a film thickness of 200–600 μ m was grown on the as-grown three-dimensional supercritical acidic ammonia technology (SCAAT TM ) bulk seed that comprised only semipolar { 10 1 ¯ 1 ¯ } planes at a temperature as high as 1390 °C by tri-halide vapor phase epitaxy; further, the GaN film was also characterized. The FWHM value of the X-ray rocking curves was ∼40″, which was almost similar to the value of the used seed. The curvature radii were as large as 40–64 m. Further, the carrier concentrations were observed to be as small as 5.1 × 10 17 –9.1 × 10 17 cm −3 . However, the basal plane stacking fault densities were observed to be 3.4 × 10 1 –5.4 × 10 1 cm −1 and were observed to increase during the growth process because of the as-grown SCAAT TM seed surface condition.