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First-principles calculations of carrier localization in fluctuated InGaN quantum wells
Author(s) -
Toshiyuki Kunikiyo,
Shinnosuke Hattori,
Raku Shirasawa,
Shigetaka Tomiya
Publication year - 2019
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.7567/1347-4065/ab0f18
Subject(s) - quantum well , perpendicular , indium , condensed matter physics , polarization (electrochemistry) , materials science , plane (geometry) , electronic band structure , physics , optics , optoelectronics , chemistry , geometry , laser , mathematics

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