Open AccessComposition, structure, and semiconducting properties of Mg x Zr2−x N2 thin films
Author(s) -
Sage R. Bauers,
Danielle M. Hamann,
Ashlea Patterson,
John D. Perkins,
Kevin R. Talley,
Andriy Zakutayev
Publication year - 2019
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.7567/1347-4065/ab0f0f
Subject(s) - lattice constant , thin film , analytical chemistry (journal) , stoichiometry , materials science , electrical resistivity and conductivity , crystal structure , conductivity , nitride , sputtering , sputter deposition , x ray crystallography , diffraction , crystallography , chemistry , nanotechnology , optics , layer (electronics) , physics , electrical engineering , engineering , chromatography
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