Open AccessHigh-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study
Author(s) -
Shahed Reza,
Brianna Klein,
Albert G. Baca,
Andrew Armstrong,
Andrew A. Allerman,
E Douglas,
Robert Kaplar
Publication year - 2019
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.7567/1347-4065/ab07a5
Subject(s) - transistor , saturation velocity , materials science , optoelectronics , power density , channel (broadcasting) , electron mobility , power (physics) , saturation (graph theory) , electrical engineering , physics , voltage , engineering , quantum mechanics , mathematics , combinatorics
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