Open AccessReuse of ScAlMgO4 substrates utilized for halide vapor phase epitaxy of GaN
Author(s) -
Kazuki Ohnishi,
Shigeyuki Kuboya,
Tomoyuki Tanikawa,
Takashi Iwabuchi,
Kazuya Yamamura,
Noriyuki Hasuike,
Hiroshi Harima,
Tsuguo Fukuda,
Takashi Matsuoka
Publication year - 2019
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.7567/1347-4065/ab06ab
Subject(s) - wafer , epitaxy , materials science , substrate (aquarium) , optoelectronics , halide , fabrication , vapor phase , nanotechnology , chemistry , layer (electronics) , inorganic chemistry , physics , thermodynamics , medicine , oceanography , alternative medicine , pathology , geology
ScAlMgO 4 (SCAM) substrates with a small lattice-mismatch to GaN and c -plane cleavability are promising for fabricating high-quality free-standing GaN wafers. To reduce the cost in the fabrication of free-standing GaN wafers, the reuse of a SCAM substrate is demonstrated. By cleaving a SCAM substrate which has been already utilized for the growth of a thick GaN film by halide vapor phase epitaxy, the atomically flat surface can be obtained. The threading dislocation density of a 320 μ m thick GaN film grown on this cleaved SCAM substrate is 2.4 × 10 7 cm −2 , which is almost the same as that on a new SCAM substrate. This result indicates that a SCAM substrate can be reused for GaN growth.