Open AccessA 300 nm thick epitaxial AlInN film with a highly flat surface grown almost perfectly lattice-matched to c-plane free-standing GaN substrate
Author(s) -
Makoto Miyoshi,
Mizuki Yamanaka,
Takashi Egawa,
Tetsuya Takeuchi
Publication year - 2019
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.7567/1347-4065/ab040c
Subject(s) - materials science , epitaxy , lattice constant , chemical vapor deposition , wavelength , surface roughness , substrate (aquarium) , optoelectronics , surface finish , band gap , root mean square , lattice (music) , layer (electronics) , optics , diffraction , nanotechnology , composite material , oceanography , physics , geology , acoustics , electrical engineering , engineering
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