Open AccessAnnihilation mechanism of V-shaped pits in c-GaN grown by hydride vapor-phase epitaxy
Author(s) -
Kenji Iso,
Hirofumi Ikeda,
Riki Gouda,
Tae Mochizuki,
Satoru Izumisawa
Publication year - 2019
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.7567/1347-4065/ab0402
Subject(s) - materials science , epitaxy , bar (unit) , algorithm , physics , computer science , nanotechnology , layer (electronics) , meteorology
An evident issue in performing GaN growth along the c -direction is the generation of V-shaped pits on its surface. Here, we investigated the transition of the angle of facets forming a V-shaped pit via three-photon excitation photoluminescence (3PPL). The intermittent doping of Ge was introduced to GaN growth to observe the growth front. The size of the V-shaped pit composed of { 10 1 ¯ 2 } facets decreased along the growth direction, whereas that composed of { 10 1 ¯ 1 } facets, increased. Furthermore, planar growths of c -GaN and semipolar GaN having various surface orientations revealed that the V-shaped pit composed of { 10 1 ¯ 2 } was likely to annihilate rather than that of { 10 1 ¯ 1 } under the growth condition of N 2 carrier gas, which coincides with the result of 3PPL.