Open AccessUpdated trade-off relationship between specific on-resistance and breakdown voltage in 4H-SiC{0001} unipolar devices
Author(s) -
Tsunenobu Kimoto
Publication year - 2018
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.7567/1347-4065/aae896
Subject(s) - breakdown voltage , materials science , impact ionization , voltage , silicon carbide , optoelectronics , ionization , composite material , electrical engineering , chemistry , engineering , ion , organic chemistry
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