Open AccessQuantum Dipole Effects in a Silicon Transistor under High Electric Fields
Author(s) -
Shinichi Saito,
Liang Zuo,
Hiroyuki Yoshimoto,
Isao Tomita,
Yoshishige Tsuchiya,
Y. Sasago,
Hideo Arimoto,
Fayong Liu,
Muhammad Husain,
D. Hisamoto,
H.N. Rutt,
Susumu Kurihara
Publication year - 2018
Publication title -
journal of the physical society of japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.76
H-Index - 139
eISSN - 1347-4073
pISSN - 0031-9015
DOI - 10.7566/jpsj.87.094801
Subject(s) - dipole , electric field , silicon , transistor , field effect transistor , materials science , condensed matter physics , optoelectronics , electric dipole transition , physics , magnetic dipole , quantum mechanics , voltage