Open AccessForward current transport and noise behavior of GaN Schottky diodes
Author(s) -
江南大学
Publication year - 2021
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.70.20201467
Subject(s) - thermionic emission , diode , physics , schottky diode , quantum tunnelling , infrasound , current (fluid) , schottky barrier , materials science , noise (video) , condensed matter physics , optoelectronics , electron , artificial intelligence , computer science , image (mathematics) , thermodynamics , quantum mechanics , acoustics
In this work, we first measure the forward temperature-dependent current-voltage ( T - I - V ) characteristics of the GaN-based Schottky diodes grown on the bulk GaN substrates, and then study the transport mechanisms of the forward current and the low-frequency current noise behaviors under various injection levels. The results are obtained below. 1) In a forward high-bias region the thermionic emission current dominates, and the extracted barrier height is about 1.25 eV at T = 300 K, which is close to the value measured by capacitance-voltage sweeping. 2) In a forward low-bias region ( V T = 300 K, which indicates that the conductive dislocation should be mainly responsible for the excessive leakage current, having a reduced barrier around the core of dislocations. 3) The Lorentzian noise appears only at very small current ( I f f noise becomes important and the corresponding coefficient is determined to be about 1.1, where the transport is affected by the random fluctuation of the Schottky barrier height.