Application of Ge₅₀Te₅₀/Zn₁₅Sb₈₅ nanocomposite multilayer films in high thermal stability and low power phase change memory

The Ge 50 Te 50 /Zn 15 Sb 85 nanocomposite multilayer films are prepared by the magnetron sputtering. The variation of resistance with temperature and with crystallization activation energy is studied. The multilayer structure of the section before and after the crystallization for Ge 50 Te 50 /Zn 15 Sb 85 nanocomposite multilayer film is compared by transmission electron microscope. The phase change memory device based on [GT(7nm)/ZS(3nm)] 5 is manufactured, and the electrical performance is measured. The fast switching speed, low operating power consumption, and good cycling performance are achieved for Ge 50 Te 50 /Zn 15 Sb 85 . Ge 50 Te 50 /Zn 15 Sb 85 , which is a kind of nanocomposite multilayer film, a promising phase change storage material with high thermal stability and low power consumption.