Open AccessSemiconductor yellow light-emitting diodes
Author(s) -
Fengyi Jiang,
Junlin Liu,
Jianli Zhang,
Ling Xu,
Jie Ding,
Guangxu Wang,
Zhi Quan,
Xiaoming Wu,
Peng Zhao,
Liu Biyu,
Dan Li,
Xiaolan Wang,
Zheng Chang,
Shangke Pan,
Fang Fang,
Chunlan Mo
Publication year - 2019
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.68.20191044
Subject(s) - light emitting diode , materials science , optoelectronics , quantum efficiency , diode , semiconductor , wavelength , phosphor , energy conversion efficiency , quantum well , optics , laser , physics
The development of semiconductor light-emitting diode (LED) in the visible emission range is very unbalance, as the power efficiency of yellow LED is far below other colors. Based on the GaN/Si technology, the authors and his team made a systematic research from the aspect of material growth, chip fabrication, device physics and equipment design, resolved the problems of epi-film cracking, high dislocation density, large strain in quantum well (QW), phase separation in QW, low QW growth temperature, low hole concentration, light absorption by substrate and light blocking by electrode, successfully made a breakthrough in fabricating efficient yellow LED. The yellow LED chip achieves a power efficiency of 26.7% at 20 A/cm 2 with 565 nm wavelength and efficacy of 164 lm/W, and the power efficiency goes up to 42.8% at 1 A/cm 2 with 577 nm wavelength and efficacy of 248 lm/W. New LED light source with multi-colors and without phosphor was developed based on the efficient yellow LEDs, opened up a new direction of pure LED healthy lighting.